Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM P.
low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 1.0 Watts Single Ended Package Style SOT 223 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T C= 25 C ) Total Device Dissipation 2 Watts Junction to Case Thermal Resistance o 26.00 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 30 V 0.8 A .
The P100 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single packag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P120 |
TT |
Rotary Potentiometer | |
2 | P1200A |
Diotec |
Silicon Rectifier Diodes | |
3 | P1200A |
Semikron |
Standard silicon rectifier diodes | |
4 | P1200B |
Diotec |
Silicon Rectifier Diodes | |
5 | P1200B |
Semikron |
Standard silicon rectifier diodes | |
6 | P1200D |
Diotec |
Silicon Rectifier Diodes | |
7 | P1200D |
Semikron |
Standard silicon rectifier diodes | |
8 | P1200G |
Diotec |
Silicon Rectifier Diodes | |
9 | P1200G |
Semikron |
Standard silicon rectifier diodes | |
10 | P1200J |
Semikron |
Standard silicon rectifier diodes | |
11 | P1200K |
Semikron |
Standard silicon rectifier diodes | |
12 | P1200M |
Semikron |
Standard silicon rectifier diodes |