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P1210BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 12mΩ @VGS = 10V ID 8.7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID .
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | P1210BK |
UNIKC |
MOSFET |
|
| 2 | P121 |
Polyfet RF Devices |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 3 | P121 |
International Rectifier |
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |
|
| 4 | P1212AT |
UNIKC |
N-Channel MOSFET |
|
| 5 | p121U |
2Pai Semi |
150Kbps Dual-Channel Digital Isolators |
|
| 6 | P120 |
TT |
Rotary Potentiometer |
|
| 7 | P1200A |
Diotec |
Silicon Rectifier Diodes |
|
| 8 | P1200A |
Semikron |
Standard silicon rectifier diodes |
|
| 9 | P1200B |
Diotec |
Silicon Rectifier Diodes |
|
| 10 | P1200B |
Semikron |
Standard silicon rectifier diodes |
|
| 11 | P1200D |
Diotec |
Silicon Rectifier Diodes |
|
| 12 | P1200D |
Semikron |
Standard silicon rectifier diodes |
|