P1203BD - UNIKC

P1203BD MOSFET

P1203BD N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 12mΩ @VGS = 10V 48A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID 48 TC = 100 °C 30 IDM 144.

Features

D = 250mA 30 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.0 1.5 3.0 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V , TC = 125 °C 1 10 On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 144 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.5V, ID = 20A VGS = 10V, ID = 20A VDS = 5V, ID = 20A 14 17.5 9.6 12 40 DYNAMIC Input Capacitance Ciss 1100 Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 170 Reverse Transfer Capacitance Crss 108 Gate R.