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P082ABD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 8mΩ @VGS = 10V ID 52A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 52 33 130 Avalanche Current .
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | P0803BDG |
UNIKC |
MOSFET |
|
| 2 | P0803BVG |
UNIKC |
N-Channel MOSFET |
|
| 3 | P0804BD |
UNIKC |
MOSFET |
|
| 4 | P0804BD8 |
UNIKC |
MOSFET |
|
| 5 | P0804BK |
UNIKC |
MOSFET |
|
| 6 | P0804BVG |
UNIKC |
N-Channel MOSFET |
|
| 7 | P0806AT |
UNIKC |
N-Channel MOSFET |
|
| 8 | P0806ATF |
UNIKC |
N-Channel MOSFET |
|
| 9 | P0806ATX |
UNIKC |
N-Channel MOSFET |
|
| 10 | P0808ATG |
NIKO-SEM |
N-Channel Transistor |
|
| 11 | P0808ATG |
UNIKC |
N-Channel MOSFET |
|
| 12 | P0838LC06B |
IXYS |
Fast Turn-off Thyristor |
|