General Purpose Silicon Sensors (Series 5T) The Centronic Series 5T detectors offer high blue sensitivity coupled with high shunt resistance and low dark leakage current. They are particularly suited to low light level applications from 430-900 nm where the highest signal to noise ratio is important. They may be operated photovoltaically or with a reverse bi.
0.21 0.21 0.21 Dark Current (nA) NEP WHz-½ λ = 436 nm Typ. Capacitance pF Shunt Resistance Meg. ohms Min. 250 100 100 60 50 20 5 3 2 1 Typ. 1000 700 600 300 200 100 25 12 15 5 7 9 9 10 12 20 26 30 45 125 1 1 3 3 3 8 / 23 9 9 13 15 Risetime ns λ = 820 nm RL = 50 Ω Typ. Package mm2 OSD1-5T 1 OSD3-5T 3 OSD5-5T 5 OSD7.5-5T 7.5 OSD15-5T 15 OSD35-5T 35 OSD50-5T 50 OSD60-5T 62 OSD100-5T 100 OSD300-5T 300 mm 1.13 dia 2.16 x 1.4 2.52 dia 2.75 x 2.75 3.8 x 3.8 5.9 x 5.9 7.98 dia 7.9 x 7.9 11.3 dia 19.54 dia Max. 1 2 2 3 5 10 15 25 30 200 Typ. 0.2 0.5 0.5 1 1 2 5 6 8 30 2.5e-14 3.0e-14 3.3e-14 4.6e-1.
Photovoltaic Series Planar Diffused Silicon Photodiodes The Photovoltaic Detector series is utilized for applications re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | OSD15-E |
ETC |
(OSDxx-E) Silicon Photodetectors | |
2 | OSD15-E |
CENTRONIC |
Silicon Photodetectors | |
3 | OSD1-5T |
OSI |
(OSDxx-5T) Photovoltaic | |
4 | OSD1-5T |
CENTRONIC |
(OSDxx-5T) General Purpose Silicon Sensors | |
5 | OSD1-E |
ETC |
(OSDxx-E) Silicon Photodetectors | |
6 | OSD1-E |
CENTRONIC |
Silicon Photodetectors | |
7 | OSD100-5T |
CENTRONIC |
(OSDxx-5T) General Purpose Silicon Sensors | |
8 | OSD100-5TA |
OSI |
(OSDxx-5T) Photovoltaic | |
9 | OSD100-E |
ETC |
(OSDxx-E) Silicon Photodetectors | |
10 | OSD100-E |
CENTRONIC |
Silicon Photodetectors | |
11 | OSD035T0325-23TS |
OSD |
LCD | |
12 | OSD056TN52 |
OSD |
LCD |