OP803SL - OPTEK Technologies

OP803SL NPN Silicon Phototransistors

Types OP800SL thru OP805SL Electrical Characteristics (TA= 25' C unless otherwise noted) SYMBOL PARAMETER I I c ( o ~ ) On-State Collector Current MIN TYP MAX UNITS OP800SL 0.5 OP801SL 0.5 1 3.0 mA mA TEST CONDITIONS ICEO Collector Dark Current V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO Collector-Base Breakdown Voltage I V(BR)ECO Emitter.

Features

AMBIENT TEMPERATURE - C' Rise and Fall Time vs. Load Resistance -vcc 5 v - -VRL 1 v -FREOUENCY 100 Hz -PULSE WIDTH 1 ms --LED OP290C -X 890 ,nm - 0 2.000 6.000 10,000 -RL LOAD RESISTANCE - Ohms - -- 5 0 - 2 5 0 25 50 75 100 125 TA AMBIENT TEMPERATURE C' Normalized Collector Current vs. Angular Displacement TEST CONOITIONS: -' X 890 nm -.IF 100 mA -VCE 5 V -.LENS TO LENS ,DISTANCE 6' I I I J
*' 4 L I 45 30 15 0 15 30 - -9 ANGULAR DISPLACEMENT Oeg. J 45 / 0 4 8 12 16 20 24 E, - IRRAOIANCE - mW cm' Switching Time Test Circuit Light source IS a pulsed -gallam arsen~deLEO w~tha ... fh e.