The OP770 consists of an NPN phototransistor and 1000 pF capacitor molded in a clear epoxy package. The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could compromise signal integrity. The device’s wide receiving angle provides relatively even reception over a large area. The OP770 i.
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Supresses high frequency noise Variety of sensitivity ranges Wide receiving angle Side looking package for space limited applications
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40 ° C to +100° C Lead Soldering Tem pera ture [1/16 inch (1.6 mm).
OP550, OP552, OP555, OP750, OP755, OP770 and OP775 series consists of a NPN silicon phototransistor molded in an epoxy .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | OP770B |
OPTEK Technologies |
NPN Photo transistor | |
2 | OP770B |
TT |
Silicon Phototransistor | |
3 | OP770C |
OPTEK Technologies |
NPN Photo transistor | |
4 | OP770C |
TT |
Silicon Phototransistor | |
5 | OP770D |
OPTEK Technologies |
NPN Photo transistor | |
6 | OP770D |
TT |
Silicon Phototransistor | |
7 | OP77 |
Analog Devices |
Next Generation OP07 Ultralow Offset Voltage Operational Amplifier | |
8 | OP775A |
OPTEK Technologies |
NPN Phototransistor | |
9 | OP775A |
TT |
Silicon Phototransistor | |
10 | OP775B |
OPTEK Technologies |
NPN Phototransistor | |
11 | OP775B |
TT |
Silicon Phototransistor | |
12 | OP775C |
OPTEK Technologies |
NPN Phototransistor |