Each device in the OP266AA series is a high intensity gallium aluminum arsenide infrared emitting diode (GaAIAs) that is molded in an IR transmissive clear or amber-tinted epoxy package with a dome lens. Devices feature a narrow source irradiance pattern and a variety of electrical characteristics. The small T-1 package style makes these devices ideal for s.
T-1 (3 mm) package style
Narrow irradiance pattern
Dome lens
Higher power output than GaAs at equivalent drive currents
850 nm diode
Description: Each device in the OP266AA series is a high intensity gallium aluminum arsenide infrared emitting diode (GaAIAs) that is molded in an IR transmissive clear or amber-tinted epoxy package with a dome lens. Devices feature a narrow source irradiance pattern and a variety of electrical characteristics. The small T-1 package style makes these devices ideal for space -limited applications.
These devices are mechanically and spectrally matched t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | OP266AA |
TT |
Emitting Diode | |
2 | OP266AB |
TT |
Emitting Diode | |
3 | OP266AD |
TT |
Emitting Diode | |
4 | OP266 |
TT |
Emitting Diode | |
5 | OP260 |
Analog Devices |
DUAL / HIGH-SPEED / CURRENT FEEDBACK / OPERATIONAL AMPLIFIER | |
6 | OP262 |
Analog Devices |
15 MHz Rail-to-Rail Operational Amplifiers | |
7 | OP265 |
TT |
Emitting Diode | |
8 | OP265FAA |
TT |
Plastic Infrared Emitting Diode | |
9 | OP265FAB |
TT |
Plastic Infrared Emitting Diode | |
10 | OP265WPS |
TT |
Emitting Diode | |
11 | OP268F |
TT |
Emitting Diode | |
12 | OP268FA |
TT |
Emitting Diode |