Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches the spectral response of silic.
• TO-46 hermetically sealed package with lens
• Twice the power output of GaAs at same drive current
• Characterized to define infrared energy along mechanical axis of device
• Narrow beam angle
• Processed to MIL-PRF-19500
Description:
Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches the spectral response of silicon.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | OP236TX |
TT |
High Reliability Hermetic Infrared Emitting Diode | |
2 | OP236 |
TT |
High Reliability Hermetic Infrared Emitting Diode | |
3 | OP23 |
ETC |
c-H-RAS | |
4 | OP230 |
TT electronics |
Hermetic Infrared Emitting Diode | |
5 | OP230WPS |
TT |
Point Source Hermetic Infrared Emitting Diode | |
6 | OP231 |
TT electronics |
Hermetic Infrared Emitting Diode | |
7 | OP231 |
OPTEK Technologies |
GaAlAs Hermetic Infrared Emitting Diode | |
8 | OP231W |
TT electronics |
Hermetic Infrared Emitting Diode | |
9 | OP232 |
TT electronics |
Hermetic Infrared Emitting Diode | |
10 | OP232 |
OPTEK Technologies |
GaAlAs Hermetic Infrared Emitting Diode | |
11 | OP232W |
TT electronics |
Hermetic Infrared Emitting Diode | |
12 | OP233 |
TT electronics |
Hermetic Infrared Emitting Diode |