ON5088 - NXP

ON5088 NPN wideband silicon germanium RF transistor

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standar.

Features

 Low noise high gain microwave transistor
 High maximum stable gain 27 dB at 1.8 GHz
 110 GHz fT silicon germanium technology 1.3 Applications
 2nd and 3rd LNA stage in DBS LNBs
 Satellite radio
 Low noise amplifiers for microwave communications systems
 WLAN and WiMAX applications
 Analog/digital cordless applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VCB collector-base voltage VCE collector-emitter voltage VEB IC Ptot hFE CCBS emitter-base voltage collector current total power dissipation DC current gain collector-base capacitance Conditions.