The OHB3040 consists of a ceramic Hall-effect sensor (OMH3040) and a rare earth magnet mounted in a low-cost plastic housing. The magnet produces optimum magnetic flux at the Hall-effect sensor location. The sensor has an open collector transistor output, which is activated when the slot is open. When the slot is blocked by a ferrous material that reduces t.
• Non-contact motion sensing
• Operates over a broad range of supply voltages (4.5 V to 25 V)
• Excellent temperature stability
• Hall element, linear amplifier and Schmitt trigger on a single Hallogic
silicon chip
• Suitable for military and space applications.
• Performs in dirty environments over wide temperature range
• 0.125” (3.18 mm) wide gap
Description:
The OHB3040 consists of a ceramic Hall-effect sensor (OMH3040) and a rare earth magnet mounted in a low-cost plastic housing. The magnet produces optimum magnetic flux at the Hall-effect sensor location. The sensor has an open collec.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | OHB3040S |
TT |
Hallogic Hall-Effect Sensor Assembly | |
2 | OHB660CB |
ETC |
Red EMITTING DIODES | |
3 | OHB900 |
TT |
Hallogic Hall-Effect Sensor Assembly | |
4 | OHB900 |
OPTEK |
Hallogic Hall Effect Sensor Assembly | |
5 | OH017 |
Panasonic Semiconductor |
GaAs hall element | |
6 | OH023 |
Panasonic Semiconductor |
GaAs hall element | |
7 | OH090U |
TT |
Hallogic Hall-Effect Sensors | |
8 | OH10003 |
Panasonic Semiconductor |
GaAs Hall Device | |
9 | OH10004 |
Panasonic Semiconductor |
GaAs Hall Device | |
10 | OH10008 |
Panasonic Semiconductor |
GaAs Hall Device | |
11 | OH10009 |
Panasonic Semiconductor |
GaAs Hall Device | |
12 | OH10010 |
Panasonic Semiconductor |
GaAs Hall Device |