NZT605 - Fairchild Semiconductor

NZT605 NPN Darlington Transistor

NZT605 NPN Darlington Transistor January 2007 NZT605 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * T Symbol VCEO VCBO VEBO www.DataSheet4U.co.

Features

V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO hFE TC = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage
* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cut-off Current Conditions IC = 10mA, IB = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 120V, IE = 0 VCE = 120V, IE = 0 VEB = 8.0V, IC = 0 VCE = 5.0V, IC = 50mA VCE = 5.0V, IC = 500mA VCE = 5.0V, IC = 1.0A VCE = 5.0V, IC = 1.5A VCE = 5.0V, IC = 2.0A IC = 250mA, IB = 0.25mA IC = 1.0A, IB = 1.0mA IC = 1.0A, IB = 1.0mA IC = 1.0A, VCE = 5.0V IC = 10.