NVXK2KR80WDT - ON Semiconductor

NVXK2KR80WDT SiC

Silicon Carbide (SiC) Module – EliteSiC Power Module for OBC, 80 mohm, 1200 V, 20 A, Vienna Rectifier, in APM32 Series NVXK2KR80WDT Features • DIP Silicon Carbide Vienna Rectifier Power Module for On−board Charger (OBC) for xEV Applications • Creepage and Clearance per IEC60664−1, IEC 60950−1 • Compact Design for Low Total Module Resistance • Module Serial.

Features

• DIP Silicon Carbide Vienna Rectifier Power Module for On−board Charger (OBC) for xEV Applications
• Creepage and Clearance per IEC60664−1, IEC 60950−1
• Compact Design for Low Total Module Resistance
• Module Serialization for Full Traceability
• Lead Free, ROHS and UL94V−0 Compliant
• Automotive Qualified per AEC−Q101 and AQG324 Typical Applications
• Vienna PFC for On−Board Charger in xEV Applications MAXIMUM RATINGS MOSFET (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Recommended Operation Values of Gate−to−Source Volta.