NVVR26A120M1WSS - ON Semiconductor

NVVR26A120M1WSS SiC Module

The NVVR26A120M1WSS is part of the EliteSiC power module for traction inverter, a revolutionary high mobility compound semiconductor product family that offers increased performance, better efficiency, and higher power density in similar and highly compatible packaging solutions. The module integrates 1200 V SiC MOSFET in a half−bridge configuration. To enha.

Features

• Ultra Low RDS(on)
• Aluminum Nitride Isolator
• Ultra−low Stray Inductance ~ 7.1 nH
• Tvj.Max = 175°C for Continuous Operation
• Automotive Grade SiC MOSFET Chip Technologies
• Sintered Die Technology for High Reliability Performance
• Automotive Module AQG324 Compliant
• PPAP Capable Applications
• Automotive EV/HEV− Traction Inverter DATA SHEET www.onsemi.com AHPM15−CDI MODULE CASE MODHN MARKING DIAGRAM BOTTOM SIDE ZZZ ATYWW K2R261S NNNNNNN ZZZ = Assembly Lot Code K2R261S = Marking Value AT = Assembly & Test Location Y = Year WW = Work Week NNNN = Serial Number PIN CONFIGUR.