MOSFET – Power, Single N-Channel 60 V, 9.2 mW, 50 A NVMYS9D3N06CL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS .
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• LFPAK4 Package, Industry Standard
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
50
A
35
46
W
23
Continuous D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NVMYS003N08LH |
ON Semiconductor |
N-Channel Power MOSFET | |
2 | NVMYS013N08LH |
ON Semiconductor |
N-Channel Power MOSFET | |
3 | NVMYS016N06C |
ON Semiconductor |
N-Channel Power MOSFET | |
4 | NVMYS029N08LH |
ON Semiconductor |
N-Channel Power MOSFET | |
5 | NVMYS1D3N04C |
ON Semiconductor |
N-Channel Power MOSFET | |
6 | NVMYS1D7N04C |
ON Semiconductor |
N-Channel MOSFET | |
7 | NVMYS3D5N04C |
ON Semiconductor |
N-Channel MOSFET | |
8 | NVMYS3D8N04CL |
ON Semiconductor |
N-Channel MOSFET | |
9 | NVMYS4D5N04C |
ON Semiconductor |
N-Channel Power MOSFET | |
10 | NVMYS4D6N04CL |
ON Semiconductor |
N-Channel Power MOSFET | |
11 | NVMYS4D6N06C |
ON Semiconductor |
N-Channel Power MOSFET | |
12 | NVM3060 |
ETC |
4096-Bit EEPROM |