MOSFET – Power, Single N-Channel 60 V, 1.3 mW, 262 A NVMJS1D4N06CL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS.
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• LFPAK8 Package, Industry Standard
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
Continuous Drain Current RqJC (Notes 1, 3)
Steady TC = 25°C
ID
State
TC = 100°C
20
V
262
A
185
Power Dissipation RqJC (Note 1)
Continuous Drain Current RqJA (Notes 1, 2, 3)
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NVMJS2D5N06CL |
ON Semiconductor |
N-Channel Power MOSFET | |
2 | NVMJST0D9N04C |
ON Semiconductor |
N-Channel Power MOSFET | |
3 | NVMJST1D2N04C |
ON Semiconductor |
N-Channel Power MOSFET | |
4 | NVMJST1D4N06CL |
ON Semiconductor |
N-Channel Power MOSFET | |
5 | NVMJD015N06CL |
ON Semiconductor |
Dual N-Channel Power MOSFET | |
6 | NVM3060 |
ETC |
4096-Bit EEPROM | |
7 | NVMD3P03 |
ON Semiconductor |
P-Channel Power MOSFET | |
8 | NVMD4N03 |
ON Semiconductor |
N-Channel MOSFET | |
9 | NVMD6N03R2 |
ON Semiconductor |
Power MOSFET | |
10 | NVMD6N04 |
ON Semiconductor |
Power MOSFET | |
11 | NVMD6P02 |
ON Semiconductor |
Power MOSFET | |
12 | NVMFD020N06C |
ON Semiconductor |
Dual N-Channel Power MOSFET |