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DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 80 V, 3.7 mW, 123 A NVMFS6H818N V(BR)DSS 80 V RDS(ON) MAX 3.7 mW @ 10 V ID MAX 123 A D (5,6) Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H818NWF − Wettable Flank Option for Enhanced.
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• NVMFS6H818NWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NVMFS6H818NL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 2 | NVMFS6H800N |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 3 | NVMFS6H824NL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 4 | NVMFS6H836N |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NVMFS6H858NL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | NVMFS6B03N |
ON Semiconductor |
Power MOSFET |
|
| 7 | NVMFS6B03NL |
ON Semiconductor |
Power MOSFET |
|
| 8 | NVMFS6B05N |
ON Semiconductor |
Power MOSFET |
|
| 9 | NVMFS6B05NL |
ON Semiconductor |
Power MOSFET |
|
| 10 | NVMFS6B14N |
ON Semiconductor |
Power MOSFET |
|
| 11 | NVMFS6B14NL |
ON Semiconductor |
Power MOSFET |
|
| 12 | NVMFS6B25NL |
ON Semiconductor |
Power MOSFET |
|