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NVMFS5H600NL - ON Semiconductor

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NVMFS5H600NL N-Channel Power MOSFET

MOSFET – Power, Single N-Channel, DFN5/DFNW5 60 V, 250 A, 1.3 mW NVMFS5H600NL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T.

Features


• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain−to−Source Voltage 60 V VGS Gate−to−Source Voltage ±20 V ID Continuous Drain Current RqJC (Notes 1, 3) PD Power Dissipation RqJC (Note 1) TC = 25°C 250 A Steady TC = 100°C 160 State TC = 25°C 160 W TC = 100°C 63 ID Continuous Drain .

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