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NVMFS5C645N - ON Semiconductor

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NVMFS5C645N N-Channel Power MOSFET

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, DFN5/DFNW5 60 V, 4.6 mW, 92 A NVMFS5C645N Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C645NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capa.

Features


• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• NVMFS5C645NWF − Wettable Flank Option for Enhanced Optical Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°.

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