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DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, DFN5/DFNW5 30 V, 6.0 mW, 51 A NVMFS4C310N V(BR)DSS 30 V RDS(ON) MAX 6.0 mW @ 10 V 9.0 mW @ 4.5 V ID MAX 51 A D (5−8) Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PP.
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• AEC−Q101 Qualified and PPAP Capable
• NVMFS4C310NWF − Wettable Flanks Option for Enhanced Optical
Inspection
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJA (Notes 1, 2 and 4)
TA = 25°C
TA = 100°C
ID
17
A
12
Power Dissipation
TA = 25°.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NVMFS4C305N |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 2 | NVMFS4C306N |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | NVMFS4C308N |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | NVMFS4C01N |
ON Semiconductor |
Power MOSFET |
|
| 5 | NVMFS4C03N |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | NVMFS4C05N |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 7 | NVMFS4841N |
ON Semiconductor |
Power MOSFET |
|
| 8 | NVMFS014P04M8L |
ON Semiconductor |
P-Channel MOSFET |
|
| 9 | NVMFS021N10MCL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 10 | NVMFS027N10MCL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 11 | NVMFS040N10MCL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 12 | NVMFS3D0P04M8L |
ON Semiconductor |
P-Channel Power MOSFET |
|