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NVMFD5C462NL MOSFET – Power, Dual N-Channel 40 V, 4.7 mW, 84 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C462NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and ar.
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• NVMFD5C462NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
www.onsemi.com
V(BR)DSS 40 V
RDS(ON) MAX 4.7 mW @ 10 V 7.7 mW @ 4.5 V
ID MAX 84 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 2, 3)
Power D.
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|---|---|---|---|---|
| 1 | NVMFD5C466NL |
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Dual N-Channel Power MOSFET |
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| 2 | NVMFD5C478N |
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| 4 | NVMFD5C674NL |
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| 5 | NVMFD5483NL |
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| 6 | NVMFD5485NL |
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| 7 | NVMFD5489NL |
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Dual N-Channel Power MOSFET |
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| 8 | NVMFD5852NL |
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| 9 | NVMFD5852NLWF |
ON Semiconductor |
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| 10 | NVMFD5853N |
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| 11 | NVMFD5853NL |
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| 12 | NVMFD5853NLWF |
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|