NVLJS053N12MCL - ON Semiconductor

NVLJS053N12MCL N-Channel MOSFET

MOSFET - Power, Single N-Channel, Shielded Gate, PowerTrench) 120 V, 53 mW, 4.8 A NVLJS053N12MCL Features • Shielded Gate MOSFET Technology • 50% Lower Qrr than Other MOSFET Suppliers • Lowers Switching Noise/EMI • Low Profile − 0.5 mm Maximum in MicroFET 2x2 mm • 100% UIL Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoH.

Features

• Shielded Gate MOSFET Technology
• 50% Lower Qrr than Other MOSFET Suppliers
• Lowers Switching Noise/EMI
• Low Profile − 0.5 mm Maximum in MicroFET 2x2 mm
• 100% UIL Tested
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant Typical Applications
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) VDSS 120 V VGS ±20 V TA = 25°C ID 4.8 A Power Dissipation (.