NVJD4158C - ON Semiconductor

NVJD4158C Small Signal MOSFET

NTJD4158C, NVJD4158C MOSFET – Small Signal, Complementary, SC-88 30 V/-20 V, +0.25/-0.88 A Features • Leading 20 V Trench for Low RDS(on) Performance • ESD Protected Gate • SC−88 Package for Small Footprint (2 x 2 mm) • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable.

Features

• Leading 20 V Trench for Low RDS(on) Performance
• ESD Protected Gate
• SC−88 Package for Small Footprint (2 x 2 mm)
• NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications
• DC−DC Conversion
• Load/Power Management
• Load Switch
• Cell Phones, MP3s, Digital Cameras, PDAs www.onsemi.com V(BR)DSS N−Ch 30 V P−Ch −20 V RDS(on) Typ 1.0 W @ 4.5 V 1.5 W @ 2.5 V 215 mW @ −4.5 V 345 mW @ −2.5 V ID Max 0.25 A −0.88 A SC−88 (SOT.