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Silicon Carbide (SiC) MOSFET – 32 mohm, 650 V, M2, TO-247-3L NVHL045N065SC1 Features • Typ. RDS(on) = 32 mW @ VGS = 18 V Typ. RDS(on) = 42 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS C.
• Typ. RDS(on) = 32 mW @ VGS = 18 V
Typ. RDS(on) = 42 mW @ VGS = 15 V
• Ultra Low Gate Charge (QG(tot) = 105 nC)
• High Speed Switching with Low Capacitance (Coss = 162 pF)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC-DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
650
V
Gate−to−Source Voltage
VGS −8/+22 V
.
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