MOSFET - Power, Single N-Channel, STD Gate, m8FL 40 V, 4.9 mW, 65 A NTTFS4D9N04XM Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (3.3 x 3.3 mm) for Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • Sync.
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Motor Drive
• Battery Protection
• Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
DC
VGS
±20
V
Continuous Drain Current
TC = 25°C
IDA
65
A
TC = 100°C
46
Power Dissipation
TC = 25°C
PD
38
W
Continuous Drain Current
TA = 25°C
ID
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTTFS4800N |
ON Semiconductor |
Power MOSFET | |
2 | NTTFS4821N |
ON Semiconductor |
N-Channel Power MOSFET | |
3 | NTTFS4823N |
ON Semiconductor |
Power MOSFET | |
4 | NTTFS4824N |
ON Semiconductor |
N-Channel Power MOSFET | |
5 | NTTFS4840N |
ON Semiconductor |
Power MOSFET | |
6 | NTTFS4928N |
ON Semiconductor |
N-Channel Power MOSFET | |
7 | NTTFS4929N |
ON Semiconductor |
N-Channel Power MOSFET | |
8 | NTTFS4930N |
ON Semiconductor |
N-Channel Power MOSFET | |
9 | NTTFS4932N |
ON Semiconductor |
Power MOSFET | |
10 | NTTFS4932NTWG |
VBsemi |
N-Channel MOSFET | |
11 | NTTFS4937N |
ON Semiconductor |
Power MOSFET | |
12 | NTTFS4939N |
ON Semiconductor |
Power MOSFET |