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NTTFS4D9N04XM - ON Semiconductor

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NTTFS4D9N04XM N-Channel Power MOSFET

MOSFET - Power, Single N-Channel, STD Gate, m8FL 40 V, 4.9 mW, 65 A NTTFS4D9N04XM Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (3.3 x 3.3 mm) for Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • Sync.

Features


• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications
• Motor Drive
• Battery Protection
• Synchronous Rectification MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage DC VGS ±20 V Continuous Drain Current TC = 25°C IDA 65 A TC = 100°C 46 Power Dissipation TC = 25°C PD 38 W Continuous Drain Current TA = 25°C ID .

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