Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
This device includes two specialized N−Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency. Features Q1: N−Channel • Max rDS(on) = 9.0 mW at VGS = 10 V, ID = 10 A.
Q1: N−Channel
• Max rDS(on) = 9.0 mW at VGS = 10 V, ID = 10 A
• Max rDS(on) = 13 mW at VGS = 4.5, ID = 8.0 A
Q2: N−Channel
• Max rDS(on) = 9.0 mW at VGS = 10 V, ID = 10 A
• Max rDS(on) = 13 mW at VGS = 4.5, ID = 8.0 A
• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
Lower Switching Losses
• RoHS Compliant
Typical Applications
• Computing
• Communications
• General Purpose Point of Load
PIN DESCRIPTION
Pin
Name
1, 11, 12
GND (LSS)
2
LSG
3, 4, 5, 6
V + (HSD)
7
HSG
8, 9, 10
SW
Description Low Side Source Low Side Gate High Side Drain High Side Gate Switching Node, L.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTTFD021N08C |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | NTTFD022N10C |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | NTTFD2D8N03P1E |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 4 | NTTFS002N04C |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NTTFS004N04C |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | NTTFS012N10MD |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 7 | NTTFS015N04C |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 8 | NTTFS024N06C |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 9 | NTTFS080N10G |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 10 | NTTFS115P10M5 |
ON Semiconductor |
P-Channel Power MOSFET |
|
| 11 | NTTFS1D8N02P1E |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 12 | NTTFS3A08P |
ON Semiconductor |
Power MOSFET |
|