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NTP5426NG-VB NTP5426NG-VB Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: TO-220AB D www.VBsemi.com G GDS S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise no.
• 175 °C Junction Temperature
• TrenchFET® Power MOSFET
• Material categorization:
TO-220AB
D
www.VBsemi.com
G
GDS
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
ID
120 90
Pulsed Drain Current
IDM
350
A
Continuous Source Current (Diode Conduction)
IS
70a
Avalanche Current
IAS
50
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAS
125
mJ
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
PD
136 3b, 8..
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