NTMS4801N Power MOSFET Features 30 V, 12 A, N−Channel, SO−8 • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb−Free Device www.DataSheet4U.com http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 9.0 mW @ 10 V 12.5 mW @ 4.5 V N−Channel D Value 30 ±20 9.9 7.9 PD I.
30 V, 12 A, N−Channel, SO−8
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Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb−Free Device
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS 30 V RDS(ON) MAX 9.0 mW @ 10 V 12.5 mW @ 4.5 V N−Channel D Value 30 ±20 9.9 7.9 PD ID PD ID 1.41 7.5 6.0 0.8 12 9.6 PD IDM TJ, Tstg IS EAS 2.1 35 −55 to 150 2.1 98 W A °C A mJ W A
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Applications
ID MAX 12 A
• DC−DC Converters
• Synchronous MOSFET
• Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain−to−Source Voltage Gate−to−S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTMS4800N |
ON Semiconductor |
Power MOSFET | |
2 | NTMS4802N |
ON Semiconductor |
Power MOSFET | |
3 | NTMS4807N |
ON Semiconductor |
Power MOSFET | |
4 | NTMS4816N |
ON Semiconductor |
Power MOSFET | |
5 | NTMS4840N |
ON Semiconductor |
Power MOSFET | |
6 | NTMS4872N |
ON Semiconductor |
Power MOSFET | |
7 | NTMS4873NF |
ON Semiconductor |
Power MOSFET | |
8 | NTMS4107N |
ON Semiconductor |
Power MOSFET | |
9 | NTMS4117N |
ON Semiconductor |
Power MOSFET | |
10 | NTMS4118N |
ON Semiconductor |
Power MOSFET | |
11 | NTMS4176P |
ON Semiconductor |
Power MOSFET | |
12 | NTMS4177P |
ON Semiconductor |
Power MOSFET |