NTMFS5H663NL - ON Semiconductor

NTMFS5H663NL N-Channel Power MOSFET

MOSFET – Power, Single, N-Channel 60 V, 7.2 mW, 61 A NTMFS5H663NL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−.

Features

• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 61 A 39 52 W 21 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) T.