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This N−Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features Shielded Gate MOSFET Technology Max rDS(on) = 7.2 mW at VGS = 10 V, ID = .
Shielded Gate MOSFET Technology
Max rDS(on) = 7.2 mW at VGS = 10 V, ID = 28 A
Max rDS(on) = 23.4 mW at VGS = 6 V, ID = 14 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
100% UIL Tested
These Devices are Pb−Free and are RoHS Compliant
Applications
Primary DC−DC MOSFET
Synchronous Rectifier in DC−DC and AC−DC
Motor Drive
Solar
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain to Source Voltage
100
V
VGS
Gate to Source Voltage
20
V
ID
Drain Current:
A
Continuous, TC .
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