NTMFD6H846NL - ON Semiconductor

NTMFD6H846NL Dual N-Channel Power MOSFET

MOSFET – Power, Dual, N-Channel 80 V, 15 mW, 31 A NTMFD6H846NL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Sou.

Features

• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 2, 3) Steady TC = 25°C ID State TC = 100°C 31 A 22 Power Dissipation RqJC (Notes 1, 2) TC = 25°C PD TC = 100°C 34 W 17 Continuous Drain Current RqJA (Notes 1, 2, 3) Steady TA = 25°C ID State .