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NTGS3130N, NVGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features • Leading Edge Trench Technology for Low On Resistance • Low Gate Charge for Fast Switching • Small Size (3 x 2.75 mm) TSOP−6 Package • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • T.
• Leading Edge Trench Technology for Low On Resistance
• Low Gate Charge for Fast Switching
• Small Size (3 x 2.75 mm) TSOP−6 Package
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device
Applications
• DC−DC Converters
• Lithium Ion Battery Applications
• Load/Power Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage
VDSS 20 V VGS ±8 V
Continuous Drain Current (Note 1)
Power Dissipation (Note 1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTGS3433T1 |
ON Semiconductor |
Power MOSFET |
|
| 2 | NTGS3441 |
ON Semiconductor |
Power MOSFET |
|
| 3 | NTGS3441B |
ON Semiconductor |
Power MOSFET |
|
| 4 | NTGS3441P |
ON Semiconductor |
Power MOSFET |
|
| 5 | NTGS3441T1 |
ON Semiconductor |
Power MOSFET |
|
| 6 | NTGS3441T1G |
ON Semiconductor |
Power MOSFET |
|
| 7 | NTGS3443 |
ON Semiconductor |
Power MOSFET |
|
| 8 | NTGS3443B |
ON Semiconductor |
Power MOSFET |
|
| 9 | NTGS3443T1G |
ON Semiconductor |
Power MOSFET |
|
| 10 | NTGS3446 |
ON Semiconductor |
Power MOSFET |
|
| 11 | NTGS3455T1 |
ON Semiconductor |
Power MOSFET |
|
| 12 | NTGS4111P |
ON Semiconductor |
Power MOSFET |
|