NTE6810 - NTE Electronics

NTE6810 Integrated Circuit 128 x 8-Bit Static Random Access Memory (SRAM)

The NTE6810 is a byte–orgainzed memory in a 24–Lead DIP type package designed for use in bus– organized systems. It is fabricated with N–channel silicon–gate technology. For ease of use, this device operates from a single power supply, has compatibility with TTL and DTL, and needs no clocks or refreshing because of static operation. The memory is compatible.

Features

D Organized as 128 Bytes of 8
  –Bits D Static Operation D Bidirectional Three
  –State Data Input/Output D Six Chip Select Inputs (Four Active Low, Two Active High) D Single 5V Power Supply D TTL Compatible D Maximum Access Time: 450ns Absolute Maximum Ratings: Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
  –0.3 to +7V Input Voltage, Vin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
  –0.3 to +7V Operating Temperature Range, TA . . . . . . ..