NTE5329 thru NTE5331 Single Phase Bridge Rectifier 6 Amp Features: D High Case Dielectric Strength of 1500VRMS D Surge Overload Rating: 250A (Peak) D Ideal for Printed Circuit Board D Reliable Construction Utilizing Molded Plastic Technique D Glass Passivated Chip Junctions Maximum Ratings and Electrical Characteristics: (TA = +25°C unless otherwise specifie.
D High Case Dielectric Strength of 1500VRMS D Surge Overload Rating: 250A (Peak) D Ideal for Printed Circuit Board D Reliable Construction Utilizing Molded Plastic Technique D Glass Passivated Chip Junctions Maximum Ratings and Electrical Characteristics: (TA = +25°C unless otherwise specified. 60Hz Resistive or Inductive Load. For Capacitive Load, Derate Current by 20%) Maximum Recurrent Peak Reverse Voltage, PRV NTE5329 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5330 . . . . . . . . . . . . . .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTE5320 |
NTE |
Single Phase Bridge Rectifier | |
2 | NTE5322 |
NTE |
Silicon Bridge Rectifier | |
3 | NTE5322W |
NTE |
Silicon Bridge Rectifier | |
4 | NTE5324 |
NTE |
Silicon Bridge Rectifier | |
5 | NTE5324W |
NTE |
Silicon Bridge Rectifier | |
6 | NTE5326W |
NTE |
Silicon Bridge Rectifier | |
7 | NTE5327W |
NTE |
Silicon Bridge Rectifier | |
8 | NTE5328W |
NTE |
Silicon Bridge Rectifier | |
9 | NTE53 |
NTE |
Silicon NPN Transistor | |
10 | NTE53006 |
NTE Electronics |
Silicon Bridge Rectifier | |
11 | NTE53010 |
NTE Electronics |
Silicon Bridge Rectifier | |
12 | NTE53016 |
NTE Electronics |
Silicon Bridge Rectifier |