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NTE16002 Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO 40V Collector–Base Voltage, VCB . . .
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–65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter OFF Characteristics Collector
–Emitter Sustaining Voltage Emitter
–Base Breakdown Voltage Collector Cutoff Current V(BR)CEO(sus) IC = 200mA, IB = 0, Note 1 V(BR)EBO ICEO ICEX IE = 0.25mA, IC = 0 VCE = 30V, IB = 0 VCE = 30V, VBE(off) = 1.5V, TC = +200°C VCE = 65V, VBE(off) = 1.5V ICBO Emitter Cutoff Current ON Chara.
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|---|---|---|---|---|
| 1 | NTE16000-ECG |
NTE |
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| 2 | NTE16001 |
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| 3 | NTE16003 |
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|
| 4 | NTE16004 |
NTE |
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| 5 | NTE16005 |
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Silicon Complementary Transistors |
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| 6 | NTE16006 |
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| 7 | NTE160 |
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| 8 | NTE16022-ECG |
NTE |
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| 9 | NTE1604 |
NTE |
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| 10 | NTE1606 |
NTE |
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| 11 | NTE1607 |
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| 12 | NTE1608 |
NTE |
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