NTD3055L104, NTDV3055L104 MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK 12 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Store.
• Lower RDS(on)
• Lower VDS(on)
• Tighter VSD Specification
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge
• NTDV and STDV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage, Cont.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTD3055L170 |
ON Semiconductor |
N-Channel Power MOSFET | |
2 | NTD3055-094 |
ON Semiconductor |
Power MOSFET | |
3 | NTD3055-150 |
ON Semiconductor |
Power MOSFET | |
4 | NTD30 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
5 | NTD30N02 |
ON |
Power MOSFET | |
6 | NTD30N02T4 |
ON |
Power MOSFET | |
7 | NTD32N06 |
ON Semiconductor |
N-Channel DPAK | |
8 | NTD32N06L |
ON |
Power MOSFET | |
9 | NTD32N06LT4 |
ON |
Power MOSFET | |
10 | NTD35 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
11 | NTD360N65S3H |
ON Semiconductor |
N-Channel MOSFET | |
12 | NTD3808N |
ON Semiconductor |
Power MOSFET |