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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L NTBG045N065SC1 Features • Typ. RDS(on) = 31 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoH.
• Typ. RDS(on) = 31 mW @ VGS = 18 V
Typ. RDS(on) = 45 mW @ VGS = 15 V
• Ultra Low Gate Charge (QG(tot) = 105 nC)
• Low Effective Output Capacitance (Coss = 168 pF)
• 100% Avalanche Tested
• TJ = 175°C
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• SMPS (Switching Mode Power Supplies)
• Solar Inverters
• UPS (Uninterruptable Powere Supplies)
• Energy Storages
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Recommended Operatio.
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