The 512Mbit Double-Data-Rate-2 (DDR2) DRAMs is a high-speed CMOS Double Data Rate 2 SDRAM containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512Mb chip is organized as 16Mbit x 8 I/O x 4 bank or 8Mbit x 16 I/O x 4 bank device. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1066 Mb/sec/pin .
(1) posted CAS with additive latency, (2) write latency = read latency -1, (3) normal and weak strength data-output driver, (4) variable data-output impedance adjustment and (5) an ODT (On-Die Termination) function. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. A 14 bit address bus for x8 organized components and A 13 bit address bus f.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NT5TU32M16CG |
Nanya |
512Mb DDR2 SDRAM C-Die | |
2 | NT5TU32M16EG |
Nanya |
DDR2 512Mb SDRAM | |
3 | NT5TU32M16FG |
Nanya |
Commercial and Industrial DDR2 512Mb SDRAM | |
4 | NT5TU128M4CE |
Nanya |
512Mb DDR2 SDRAM C-Die | |
5 | NT5TU128M8DE-3C |
Nanya |
1Gb DDR2 SDRAM | |
6 | NT5TU128M8DE-AD |
Nanya |
1Gb DDR2 SDRAM | |
7 | NT5TU128M8GE |
Nanya |
1Gb DDR2 SDRAM | |
8 | NT5TU128M8HE |
Nanya |
Industrial and Automotive DDR2 1Gb SDRAM | |
9 | NT5TU256M4DE-3C |
Nanya |
1Gb DDR2 SDRAM | |
10 | NT5TU256M4DE-AD |
Nanya |
1Gb DDR2 SDRAM | |
11 | NT5TU256M4GE |
Nanya |
1Gb DDR2 SDRAM | |
12 | NT5TU64M16DG-3C |
Nanya |
1Gb DDR2 SDRAM |