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NT5CC256M8BN - Nanya

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NT5CC256M8BN 2Gb DDR3 SDRAM B-Die

The 2Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 2,147,483,648 bits. It is internally configured as an octal-bank DRAM. The 2Gb chip is organized as 64Mbit x 4 I/O x 8 bank, 32Mbit x 8 I/O x 8 bank or 16Mbit x 16 I/O x 8 bank device. These synchronous devices achieve high speed double-data-rate transfer rates o.

Features

and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA packages. 1 REV 1.1 08 / 2010 2Gb DDR3 SDRAM B-Die NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP NT5CC512M4BN / NT5CC256M8BN / NT5CC128M16BP Pin Configuration
  – 78 balls BG.

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