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Dual-Chip NPN General-Purpose Amplifier NSVT5551DW1 Features • This Device is Designed for General−purpose High Voltage Amplifier • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoH.
• This Device is Designed for General−purpose High Voltage
Amplifier
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (Notes 1, 2) (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Operating and Storage Junction Temperature Range
VCEO
160
V
VCBO
180
V
VEBO
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NSVT1418L |
ON Semiconductor |
PNP Single Bipolar Transistor |
|
| 2 | NSVT30010MXV6T1G |
ON Semiconductor |
Dual Matched General Purpose Transistor |
|
| 3 | NSVT3904DXV6T1G |
ON Semiconductor |
Dual General Purpose Transistor |
|
| 4 | NSVT45011MW6T3G |
ON Semiconductor |
Dual Matched General Purpose Transistor |
|
| 5 | NSV1C200L |
ON Semiconductor |
PNP Transistor |
|
| 6 | NSV1C200MZ4 |
ON Semiconductor |
PNP Transistor |
|
| 7 | NSV1C201MZ4 |
ON Semiconductor |
NPN Transistor |
|
| 8 | NSV1C300CT |
ON Semiconductor |
Bipolar Power Transistors |
|
| 9 | NSV1SS400T1G |
ON Semiconductor |
High-Speed Switching Diode |
|
| 10 | NSV40200L |
ON Semiconductor |
PNP Transistor |
|
| 11 | NSV40201LT1G |
ON Semiconductor |
NPN Transistor |
|
| 12 | NSV40501UW3 |
ON Semiconductor |
NPN Transistor |
|