NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation TA = 25°C Derate above 25°C
PD 187 (Note 1) mW 256 (Note 2)
1.5 (Note 1) mW/°C
2.0 (Note 2)
Thermal Resistance, Junction-to.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NSVBAS19L |
ON Semiconductor |
High Voltage Switching Diode | |
2 | NSVBAS21H |
ON Semiconductor |
High Voltage Switching Diode | |
3 | NSVBAS21HT1G |
ON Semiconductor |
High Voltage Switching Diode | |
4 | NSVBAS21HT3G |
ON Semiconductor |
High Voltage Switching Diode | |
5 | NSVBAS21SLT1G |
ON Semiconductor |
Dual Series High Voltage Switching Diode | |
6 | NSVBAT54HT1G |
ON Semiconductor |
Schottky Barrier Diodes | |
7 | NSVBAT54SWT1G |
ON Semiconductor |
Dual Series Schottky Barrier Diodes | |
8 | NSVBAV23CL |
ON Semiconductor |
Dual High Voltage Common Cathode Switching Diode | |
9 | NSVBAV70DXV6 |
ON Semiconductor |
Monolithic Dual Switching Diode Common Cathode | |
10 | NSVBAV70T |
ON Semiconductor |
Dual Switching Diode | |
11 | NSVBC114EPDXV6T1G |
ON Semiconductor |
Dual Bias Resistor Transistors | |
12 | NSVBC818-40L |
ON Semiconductor |
General Purpose Transistors |