NST847BDP6T5G - ON Semiconductor

NST847BDP6T5G Dual General Purpose Transistor

The NST847BDP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premi.

Features

NST847BDP6T5G Dual General Purpose Transistor http://onsemi.com (3) (2) (1)
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• hFE, 200−450 Low VCE(sat), ≤ 0.25 V Simplifies Circuit Design Reduces Board Space Reduces Component Count This is a Pb−Free Device Rating Symbol VCEO VCBO VEBO IC HBM MM ESD Class Value 45 50 6.0 100 2 B Unit Vdc Vdc Vdc mAdc Q1 Q2 (4) (5) NST847BDP6T5G (6) MAXIMUM RATINGS Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Electrostatic Discharge 6 5 4 1 2 3 SOT−963 CASE 527AD PLASTIC THERMAL CHARACTERISTICS Characteristic (Single Hea.