NSR201MX Schottky Barrier Diode for Mixer and Detector This Schottky Barrier Diode is designed for high frequency application. It can be used widely for power detector of C Band and Mixer of Ku Band etc. X2DFN2 package is suitable for compact and efficient designs. Features • Small Interterminal Capacitance • Less Parasitic Components • Small Forward Volt.
• Small Interterminal Capacitance
• Less Parasitic Components
• Small Forward Voltage
• Small−sized Package
• Pb−Free, Halogen Free and RoHS compliance
Typical Applications
• Microwave and Submilliwave Mixer
• Microwave and Submilliwave Power Detector
Specifications
Table 1. ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Parameter
Symbol
Value
Unit
Reverse Voltage
Forward Current
Operating Junction and Storage Temperature
VR IF TJ, Tstg
2
V
50
mA
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NSR20206NXT5G |
ON Semiconductor |
20V Schottky Barrier Diode | |
2 | NSR2030QMUTWG |
ON Semiconductor |
2A 30V Schottky Full Bridge | |
3 | NSR20F20 |
ON Semiconductor |
Schottky Barrier Diode | |
4 | NSR20F30NXT5G |
ON Semiconductor |
Schottky Barrier Diode | |
5 | NSR20F40NXT5G |
ON Semiconducto |
Schottky Barrier Diode | |
6 | NSR003A0X4Z |
Lineage Power |
Naos Raptor 3A: Non-Isolated DC-DC Power Modules | |
7 | NSR006A0X4Z |
Lineage Power |
Naos Raptor 6A: Non-Isolated DC-DC Power Modules | |
8 | NSR010A0X4Z |
Lineage Power |
Naos Raptor 10A: Non-Isolated DC-DC Power Modules | |
9 | NSR0130M2T5G |
ON Semiconductor |
Schottky Barrier Diode | |
10 | NSR0130P2 |
ON Semiconductor |
Schottky Barrier Diode | |
11 | NSR0140M2T5G |
ON Semiconductor |
Schottky Barrier Diode | |
12 | NSR0140P2T5G |
ON Semiconductor |
Schottky Barrier Diode |