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NSR201MX - ON Semiconducto

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NSR201MX Schottky Barrier Diode

NSR201MX Schottky Barrier Diode for Mixer and Detector This Schottky Barrier Diode is designed for high frequency application. It can be used widely for power detector of C Band and Mixer of Ku Band etc. X2DFN2 package is suitable for compact and efficient designs. Features • Small Interterminal Capacitance • Less Parasitic Components • Small Forward Volt.

Features


• Small Interterminal Capacitance
• Less Parasitic Components
• Small Forward Voltage
• Small−sized Package
• Pb−Free, Halogen Free and RoHS compliance Typical Applications
• Microwave and Submilliwave Mixer
• Microwave and Submilliwave Power Detector Specifications Table 1. ABSOLUTE MAXIMUM RATINGS at TA = 25°C Parameter Symbol Value Unit Reverse Voltage Forward Current Operating Junction and Storage Temperature VR IF TJ, Tstg 2 V 50 mA −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device.

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