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NSM2012 - NOVOSENSE

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NSM2012 Hall-Effect-Based Current Sensor IC

........... 13 5.1. OVERVIEW ...........

Features


 High bandwidth and fast response time
 400kHz bandwidth
 1.5us response time
 High-precision current measurement
 Differential Hall sets can immune stray field
 High isolation level that meets UL standards
 Withstand isolation voltage (VISO): 3000Vrms
 Maximum surge isolation withstand voltage (VIOSM): 6kV
 CMTI > 100V/ns
 CTI(I)
 Creepage distance/Clearance distance: 4mm
 NOVOSENSE innovative ‘Spin Current’ technology makes offset temperature drift very small
 Ratiometric output or fixed output
 Working temperature: -40°C ~ 125°C
 Primary internal resistance: 1.2mΩ
 SOIC8 pa.

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