NSF080120L4A0 - nexperia

NSF080120L4A0 N-channel SiC MOSFET

The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructur.

Features

• Excellent RDSon temperature stability
• Very low switching losses
• Fast reverse recovery
• Fast switching speed
• Temperature independent turn-off switching losses
• Very fast and robust intrinsic body diode
• Faster commutation and improved switching due to the additional Kelvin source pin. 3. Applications
• E-vehicle charging infrastructure
• Photovoltaic inverters
• Switch mode power supply
• Uninterruptable power supply
• Motor drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current IDM .