NRVBSS26NT3G - ON Semiconductor

NRVBSS26NT3G Schottky Power Rectifier

DATA SHEET www.onsemi.com Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 60 VOLTS SS26T3G, NRVBSS26T3G, NRVBSS26NT3G, SRVBSS26NT3G . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay cont.

Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features
 Compact Package with J−Bend Leads Ideal for Automated Handling
 Highly Stable Oxide Passivated Junction
 Guardring for Overvoltage Protection
 Low Forward Voltage Drop
 NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
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 These are Pb−Free Devices Mechanical Characteristics:
 Case: Molded Epox.