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NRVBA1H100N - ON Semiconductor

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NRVBA1H100N Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package MBRA1H100, NRVBA1H100, NRVBA1H100N Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectificati.

Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. Features
• Small Compact Surface Mountable Package with J−Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Low Forward Voltage Drop
• Guardring for Stress Protection
• NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qua.

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