NP4P06MR-M - natlinear

NP4P06MR-M 60V P-Channel Enhancement Mode MOSFET

Schematic diagram The NP4P06MR-M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features  VDS =-60V，ID =-4A RDS(ON)(Typ.)=91mΩ @VGS=-10V RDS(ON)(Typ.)=101mΩ @VGS=-4.5V  High power and current handing capability  Lead free product is.

Features

 VDS =-60V，ID =-4A RDS(ON)(Typ.)=91mΩ @VGS=-10V RDS(ON)(Typ.)=101mΩ @VGS=-4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Marking and pin assignment Application  Battery protection  Load switch Package  SOT-23-3L XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP4P06MR-M-G Storage Temperature -55°C to +150°C Package SOT-23-3L Devices Per Reel 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage parameter Continuous Drain Current Pulsed Drain Cur.