NP4N65G - natlinear

NP4N65G 650V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP4N65G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features  VDS =650V，ID =4A RDS(ON)(Typ.)= 2.49Ω @VGS=10V  High power and current handing capability  Lead free product is acquired  Surface mount package  150 °C operating tempera.

Features

 VDS =650V，ID =4A RDS(ON)(Typ.)= 2.49Ω @VGS=10V  High power and current handing capability  Lead free product is acquired  Surface mount package  150 °C operating temperature  100% UIS tested Marking and pin assignment Application  PWM applications  Load switch  Uninterruptible power supply Package  TO-252-2L XXXXX—Wafer Information YYYYY—Quality Code Ordering Information Part Number NP4N65G-G Storage Temperature -55°C to +150°C Package TO-252-2L Devices Per Reel 2500 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source volt.