NP45S06D6-Sn - natlinear

NP45S06D6-Sn 60V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP45S06D6-Sn uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Featur.

Features

 VDS =60V ID =45A RDS(ON)(Typ.)=7.7 mΩ @VGS=10V RDS(ON)(Typ.)=11.7mΩ @VGS=4.5V  Very low on-resistance RDS(on)  150 °C operating temperature  100% UIS tested Marking and pin assignment Application  Synchronus Rectification in DC/DC Converters  Industrial and Motor Drive applications XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP45S06D6-Sn-G Storage Temperature -55°C to +150°C Package PDFN5
*6-8L-A Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current TC=25°C TC=100°C .